c opyright ruichips semiconductor co . , ltd rev . b C nov ., 2011 www. ruichips .com ru 8205g n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common rati ngs ( t a =25 c unless otherwise noted) v dss drain - source voltage 20 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 1.7 a mounted on large heat sink i d p 300 s pulse drain current tested t a =25 c 24 a t a =25 c 6 i d continuous drain current ( vgs=4.5v) t a = 7 0 c 4.5 a t a =25 c 1.5 p d maximum power dissipation t a = 7 0 c 0.96 w r q j a thermal resistance - junction to ambient 83.5 c /w ? 20 v/ 6 a, r ds ( on ) = 21 m w (typ.) @ v gs = 4.5 v r ds ( on ) = 30 m w (typ.) @ v gs = 2.5 v ? super high dense cell design ? reliable and rugged ? lead free and green available ? power management absolut e maximum ratings tssop - 8 dual n - channel mosfe t
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 2 www. ruichips .com ru 8205g electrical characteristics ( t a =25 c unless otherwise noted) r u 8205g symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 2 0 v v ds = 2 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 0 .5 0.7 1 . 5 v i gss gate leakage current v gs = 1 0 v, v ds =0v 100 n a v gs = 4.5 v, i ds = 6 a 2 1 24 m w r ds ( on ) drain - source on - state resistance v gs = 2 .5 v, i ds = 5 a 3 0 40 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 v dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 8 w c iss input c apacitance 5 80 c oss output capacitance 1 2 0 c rss reverse transfer capacitance v gs =0v, v ds = 10 v, frequency=1.0mhz 95 pf t d ( on ) turn - on delay time 5 t r turn - on rise time 1 1 t d ( off ) turn - off del ay time 3 8 t f turn - off fall time v dd = 10 v, r l = 1. 7 w , i ds = 6 a, v gen = 4.5 v, r g = 6 w 13 ns gate charge characteristics q g total gate charge 1 0 14 q gs gate - source charge 1.5 q gd gate - drain charge v ds = 16 v, v gs = 4.5 v, i ds = 6 a 3. 4 nc
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 3 www. ruichips .com ru 8205g typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transien t v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 4 www. ruichips .com ru 8205g typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 5 www. ruichips .com ru 8205g typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 6 www. ruichips .com ru 8205g avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 7 www. ruichips .com ru 8205g ordering and marking information ru 8205 package (available) g : ts sop - 8 operating temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 8 www. ruichips .com ru 8205g package information tssop - 8 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max d 2.900 3 .100 0.114 0.122 a2 0.800 1.050 0.031 0.041 e 4.300 4.500 0.169 0.177 a1 0.050 0.150 0.002 0.006 b 0.190 0.300 0.007 0.012 e 0.65 (bsc) 0.026 (bsc( c 0.090 0.200 0.004 0.008 l 0.500 0.700 0.020 0.028 e1 6.250 6.550 0.246 0.258 h 0.25(typ) 0.01(typ) a 1.200 0.047 0 8 0 8
c opyright ruichips semicondu ctor co . , ltd rev . b C nov ., 2011 9 www. ruichips .com ru 8205g customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investo r@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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